Tag: 2015

OndrejVlasin, Blai Casals, Nico Dix, Diego Gutiérrez, Florencio Sánchez & GervasiHerranz

Scientific Reports 5, 15800  (2015)| DOI: 10.1038/srep15800

of the IEEE Magnetics Society (2016)
IEEE Magnetics Distinguished Lecturer 2016

Lucía Aballe,Sonia Matencio,Michael Foerster,Esther Barrena, Florencio Sánchez,Josep Fontcubertaand Carmen Ocal.

ChemistryMaterials, 27, 6198-6204 (2015); DOI: 10.1021/acs.chemmater.5b00661

Interface and lattice strain effects in ferroelectric BaTiO3/StTiO3 superlattices

E-MRS Fall Meeting (Warsaw) 2015

Spin-order mediated magnetoresistance in metal/insulating ferrimagnet bilayers
E-MRS Fall Meeting (Warsaw) 2015.

FanmaoLiu, IgnasiFina, Diego Gutiérrez, Greta Radaelli, RiccardoBertacco, Josep Fontcuberta

Adv. Electron. Mater. 2015, 1500171 ; DOI:10.1002/aelm.201500171

Josep Fontcuberta, Vassil Skumryev, Vladimir Laukhin, Xavier Granados & Ekhard K. H. Salje

Scientific Reports 5, Article number: 13784 (2015); doi:10.1038/srep13784

Greta Radaelli , Diego Gutiérrez , Florencio Sánchez , Riccardo Bertacco , Massimiliano Stengel , and Josep Fontcuberta
Adv. Mater. 2015, DOI: 10.1002/adma.201405117

Pt/BaTiO3/La0.7Sr0.3MnO3 tunnel junctions.

It is demonstrated that reversing the polarization direction of a ferroelectric barrier in a tunnel junction leads to a change of junction conductance and capacitance, with concomitant variations on the barrier height and effective thickness, both contributing to produce larger electroresistance

Romain Bachelet, Patricia de Coux, Bénédicte Warot-Fonrose, Vassil Skumryev, Gang Niu, Bertrand Vilquin, Guillaume Saint-Girons and FlorencioSánchez
CrystEngComm,16, 10741-10745 (2014), DOI: 10.1039/C4CE01817F

Novel spinel heteroepitaxial structures composed of ferrimagnetic spinel CoFe2O4 and ultrathin γ-Al2O3 buffer layers are integrated on Si(111).

The development of today’s electronics is reaching fundamental limits and novel concepts and materials are researched to achieve ever faster and more efficient electronic devices. In this regard, oxides are well positioned, as they display a fascinating complexity of electronic phases –not present in conventional semiconductors–that may open new pathways.

The interface between LaAlO₃ and SrTiO₃ is the oxide quantum well (QW) par excellence, where superconductivity and magnetism emerge. In LaAlO₃/SrTiO₃ QWs electrons move in two dimensions forming a two-dimensional electron gas (2DEG, Box a). However, not all the electrons reside in the same QW subband (Box b) and, indeed, they behave differently depending on which orbital are they occupying. We demonstrate that the symmetry of the conduction band inside the QWs can be selected, so that the properties of electrons vary largely. In particular, we show that in the superconductive state Cooper pairs do not bind in the same way either when we change the number of electrons in the 2DEG by electric fields (Box a) or when the direction of confinement is changed (Box b). We also show that choosing the confinement plane allows manipulating the spin-dependent transport in these QWs.

Our work opens a groundbreaking route to manipulate selectively electrons in two dimensions. See more @ G. Herranz at al., Engineering two-dimensional superconductivity and Rashba spin–orbit coupling in LaAlO₃/SrTiO₃ quantum wells by selective orbital occupancy, Nature Communications 2014, doi:10.1038/ncomms7028.