High polarization, endurance and retention in sub-5 nm Hf0.5Zr0.5O2 films

High polarization, endurance and retention in sub-5 nm Hf0.5Zr0.5O2 films

J. Lyu, T. Song, I. Fina, and F. Sánchez

Nanoscale 12, 11280 (2020)

DOI: 10.1039/D0NR02204G

Abstract

Ferroelectric HfO2 is a promising material for new memory devices, but significant improvement of its important properties is necessary for practical application. However, previous literature shows that a dilemma exists between polarization, endurance and retention. Since all these properties should be simultaneously high, overcoming this issue is of the highest relevance. Here, we demonstrate that high crystalline quality sub-5 nm Hf0.5Zr0.5O2 capacitors, integrated epitaxially with Si(001), present combined high polarization (2Pr of 27 μC cm−2 in the pristine state), endurance (2Pr > 6 μC cm−2 after 1011 cycles) and retention (2Pr > 12 μC cm−2 extrapolated at 10 years) using the same poling conditions (2.5 V). This achievement is demonstrated in films thinner than 5 nm, thus opening bright possibilities in ferroelectric tunnel junctions and other devices.

 

Unraveling Ferroelectric Polarization and Ionic Contributions to Electroresistance in Epitaxial Hf0.5Zr0.5O2 Tunnel Junctions

M. Cervo Sulzbach, S. Estandía, X. Long, J. Lyu, N. Dix, J. Gàzquez, M. F. Chisholm, F. Sánchez, I. Fina,* and J. Fontcuberta*

Adv. Electron. Mater. 2019, 1900852

DOI: 10.1002/aelm.201900852

Abstract

Tunnel devices based on ferroelectric Hf0.5Zr0.5O2 (HZO) barriers hold great promises for emerging data storage and computing technologies. The resistance state of the device can be changed through use of a suitable writing voltage. However, the microscopic mechanisms leading to the resistance change are an intricate interplay between ferroelectric polarization controlled barrier properties and defect‐related transport mechanisms. The fundamental role of the microstructure of HZO films determining the balance between those contributions is demonstrated. The HZO film presents coherent or incoherent grain boundaries, associated to the coexistance of monoclinic and orthorhombic phases, which are dictated by the mismatch with the substrates for epitaxial growth. These grain boundaries are the toggle that allows to obtain either large (up to ≈450%) and fully reversible genuine polarization controlled electroresistance when only the orthorhombic phase is present or an irreversible and extremely large (≈103–105%) electroresistance when both phases coexist.

 

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maria espinola

Maria Espinola

Degree in Physics (University of Barcelona). Final degree project “Magneto-optical spectroscopy of ferromagnetic garnet thin film” with Gervasi Herranz and Blai Casals.

July 2015

Teaching_

[su_tabs][su_tab title=”UNIVERSITY COURSES”]
university

 

Universitat Autònoma de Barcelona
Bachelor degree on Nanoscience and Nanotechnology (2014-2015-2016-2017)
Lectures on “Advanced Nanomaterials”
Professor: Josep Fontcuberta

 

Universitat Autònoma de Barcelona
Master in Nanoscience and Materials Science (2011-2012-2013)
Functional Materials
Professor: Josep Fontcuberta

 

Universitat Autònoma de Barcelona
Master in Materials Science (2008-2012)
Functional Materials
Professor: Josep Fontcuberta

 

Universitat Autònoma de Barcelona
Master in Nanoscience Science (2008-2012)
Nanomagnetism
Professor: Josep Fontcuberta

[/su_tab]
[su_tab title=”OTHERS”]

others

 

School: ESPCI-ParisTech
Lecture on: Life beyond <001>: reshaping 2DEGS at the LaAlO3/SrTiO3 interface by crystal orientation
November 2013 (Paris, France)
Professor: Gervasi Herranz

 

School: 6th European School on Multiferroics (ESMF6)
Lecture on: Polarized Light for Spectroscopy and Domain Imaging
July 21-26, 2013, Wittenberg, Germany
Professor: Gervasi Herranz

 

International School on Oxide Electronics 2013
Lecture on: Polarized Light for Spectroscopy and Domain Imaging
September 2-14, 2013, Cargèse. France
Professor: Gervasi Herranz

 

International School on Oxide Electronics 2013
Lecture on: Electronic Structure of SrTiO3
06th -20th October, 2011, Cargèse. France
Professor: Gervasi Herranz

 

School: Pulsed laser deposition
Lecture on: Fundamental of Pulsed Laser Deposition
24-01-2013, ICMAB, Bellaterra
Professor: Florencio Sanchez

 

Seminaris d’actulalització científica per al professorat de Secundaria i Batxillerat
Lecture on:  Què estudia la Ciència de Materials ?  Materials avançats i nanomaterials
14 i 21 Novembre 2012, Institut de Ciència de Materials de Barcelona (ICMAB-CSIC)
Professor: Josep Fontcuerta

 

International School on Oxide Electronics 2011
Lecture on: Multiferroicy in Manganese Perovskites
06th -20th October, 2011, Cargèse. France
Professor: Josep Fontcuberta

 

International School on Oxide Electronics 2011
Lecture on: Magnetism and Magnetic Oxides
06th -20th October, 2011, Cargèse. France
Professor: Josep Fontcuberta

 

XVIII International Summer school Nicolás Cabrera
Course: Surface Functionalization of Materials for Added value applications
Lecture on: Novel Functionalities of surfaces and interfaces of oxides
11th -16th September, 2011, Miraflores de la Sierra. Spain
Professor: Josep Fontcuberta

 

European School of Multiferroics 2010
Lectures on: Electric and magnetic control of magnetization and polarization in multiferroic heterostructures and devices
L’Aquila (Italy) 27th September-1 October (2010)
Professor: Josep Fontcuberta

 

Universidad Internacional Menéndez Pelayo
Course: “Nuevos retos y aplicaciones del magnetismo”
Lectures on: Multiferroic materials: overview and some prospectives
A Coruña, 19-23 Julio 2010
Professor: Josep Fontcuberta

[/su_tab]
[/su_tabs]

ISI no indexed journals

  1.  A. Olziersky, A. Vila, M. Rubio-Roy, et al.
    Magnetic domain wall pinning by focused ion beam milling of permalloy layers
    34th International Conference on Micro- and Nano-Engineering 86, pp. 878-881 (2009)
  2.  Josep Fontcuberta
    Albert Fert i Peter Grünberg: Premis Nobel de Física 2007
    Revista de Física 4, 29 (2009)
  3. D. Hrabovský, G. Herranz, K. Postava, I.C. Infante, F. Sánchez, J. Fontcuberta
    Optical sensing of magnetic field based on magnetorefractive effect in manganites
    Proceedings of the SPIE, 7356. pp. 73560R-73560R-10 (2009)
  4. J. Fontcuberta
    El Nobel de física i el teu portàtil.
    Ciències 9, 35 (2008)
  5. J. Fontcuberta, X. Martí, F. Sánchez, D. Hrabovsky, V. Laukhin, V. Skumryev, N. Dix, M.V. García-Cuenca, C. Ferrater, M. Varela, U. Lüders, J.F. Bobo
    Exchange biasing with YMnO3 epitaxial films
    Advanced in Science and Technology 52, pp. 62-69 (2006), ed. por Trans Tech Publications. Proceedings de 11th International Conferences on Modern Materials and Technologies (CIMTEC 2006).

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