Switchable photovoltaic response in hexagonal LuMnO3 single crystals
Yunwei Sheng, Ignasi Fina, Marin Gospodinov, and Josep Fontcuberta Appl. Phys. Lett. 118, 232902 (2021); DOI: doi.org/10.1063/5.0053379 Abstract Hexagonal manganites, such as h-LuMnO3, are ferroelectric with its polar axis along the hexagonal axis and have a narrow electronic bandgap (≈1.5 eV). Using Pt electrodes, h-LuMnO3 single crystals display a strong rectification, characteristic of a […]
Orbital occupancy and hybridization in strained SrVO3 epitaxial films
Mathieu Mirjolet , Hari Babu Vasili, Adrian Valadkhani, José Santiso , Vladislav Borisov, Pierluigi Gargiani, Manuel Valvidares, Roser Valentí , and Josep Fontcuberta Phys Rev. Materials 5, 095002 (2021), DOI:10.1103/PhysRevMaterials.5.09500212K Abstract Strain is a knob that allows tuning the electronic bandwidth or the electronic distribution within the atomic orbitals is solids, to […]
Thickness effect on ferroelectric properties of La-doped HfO2 epitaxial films down to 4.5 nm
Tingfeng Song, Romain Bachelet, Guillaume Saint-Girons, Nico Dix, Ignasi Fina and Florencio Sanchez J. Mater. Chem. C, 2021, DOI: doi.org/10.1039/D1TC02512K Abstract Stabilization of the orthorhombic phase of HfO2 with La allows very high polarization and endurance. However, these properties have not been confirmed yet in films having thickness of less than 10 […]
Electron–Phonon Coupling and Electron–Phonon Scattering in SrVO3
M. Mirjolet, F. Rivadulla, P. Marsik, V. Borisov, R. Valentí, J. Fontcuberta, J. Adv. Sci. 2021, 2004207. https://doi.org/; DOI:doi.org/10.1002/advs.202004207 Abstract The nature of electron-electron and electron-lattice interactions in metallic oxides is revised. The common wisdom is that the strong correlations among electrons determine their properties. Here we argue […]
Optical Plasmon Excitations in Transparent Conducting SrNbO3 and SrVO3 Thin Films
Mathieu Mirjolet, Mikko Kataja, Tommi K. Hakala, Philipp Komissinskiy, Lambert Alff, Gervasi Herranz, Josep Fontcuberta, Adv. Opt. Materials First published: 14 June 2021; DOI:doi.org/10.1002/adom.202100520 Abstract From catalysis and flat panel displays to photovoltaics, transparent and conducting transition metal oxides are gaining momentum toward more sustainable and cost-efficient applications. Here it […]
Stabilization of the Ferroelectric Phase in Epitaxial Hf1–xZrxO2 Enabling Coexistence of Ferroelectric and Enhanced Piezoelectric Properties
Tingfeng Song, Huan Tan, Nico Dix, Rahma Moalla, Jike Lyu, Guillaume Saint-Girons, Romain Bachelet, Florencio Sánchez, and Ignasi Fina ACS Appl. Electron. Mater. 2021, 3, 5, 2106–2113 (2021); DOI:doi.org/10.1021/acsaelm.1c00122 Abstract Systematic studies on polycrystalline Hf1–xZrxO2 films with varying Zr contents show that HfO2 films are paraelectric (monoclinic). If the Zr content is […]
Critical Effect of Bottom Electrode on Ferroelectricity of Epitaxial Hf0.5Zr0.5O2 Thin Films
Saúl Estandía, Jaume Gazquez, Maria Varela, N. Dix, Mengdi Qian, Raul Solanas, Ignasi Fina and Florencio Sanchez J. Mater. Chem. C, 9, 3486 – 3492 (2021); DOI:doi.org/10.1039/D0TC05853J Abstract Epitaxial orthorhombic Hf0.5Zr0.5O2 (HZO) films on La0.67Sr0.33MnO3 (LSMO) electrodes show robust ferroelectricity, with high polarization, endurance and retention. However, no similar results have been […]
Epitaxial Ferroelectric HfO2 Films: Growth, Properties, and Devices
Ignasi Fina* and Florencio Sánchez* ACS Appl. Electron. Mater. 2021, 3, 4, 1530-1549; DOI:doi.org/10.1021/acsaelm.1c00110 Abstract About ten years after ferroelectricity was first reported in doped HfO2 polycrystalline films, there is tremendous interest in this material and ferroelectric oxides are once again in the spotlight of the memories industry. Great efforts are […]
Non-volatile optical switch of resistance in photoferroelectric tunnel junctions
Xiao Long, Huan Tan, Florencio Sánchez, Ignasi Fina, Josep Fontcuberta Nature Communications volume 12, Article number: 382 (2021); DOI:10.1038/s41467-020-20660-9 Abstract In the quest for energy efficient and fast memory elements, optically controlled ferroelectric memories are promising candidates. Here, we show that, by taking advantage of the imprint electric field existing […]
