Author: Gervasi Herranz

New projected granted to Ignasi Fina

“NANOingeniería de ÓXIdos para el mayor aprovechamiento de la energía SOLar usando rutas no convencionales (NANOXISOL)” (Oxides nanoengineering for improvement of photovoltaic efficiency using non-conventional routes) proposed by Ignasi Fina has been awarded by Comfuturo program in its second edition.


MIT-Spain “La Caixa” grant for MULFOX

MULFOX group has been awarded with a MIT-Spain “La Caixa” Foundation Seed Fund. In a press release that took place on 18th April at Palau Macaya (Barcelona), the PI of the project (Ignasi Fina) was interviewed by local radio, and he commented on the new investigations on the use of semiconducting ferroelectrics for photoelectric applications that the funded project proposes. We hope fruitful collaboration with MIT. 

Read the news  appeared in the media:


New students in our group

Great physicists: Sergio Gonzalez and Sara Ramió, have just enrolled our group. They will work on ferroelectric materials with Ignasi Fina.


All the best for them!

Halyna Volkova

PhD student Halyna Volkova is doing her PhD thesis in Université Paris-Saclay under the supervision of B. Dkhil and I.C. Infante. She will stay in our group working on growth and photovoltaic characterization of ferroelectric materials during 2 months (2018, January – March).

We hope you the best. 





Fanmao Liu Cum-Laude

Fanmao Liu merited the Cum-Laude for his PhD defense on “Photoresponse of Ferroelectric BaTiO3 thins films”.

Congratulations, Fanmao!

Fanmao Liu successfully defended his thesis

Today, Fanmao Liu has successfully defended his PhD thesis entitled “Photoresponse of ferroelectric BaTiO3 thin films” supervised by Prof. Fontcuberta and Dr. Fina. Congratulations for him and thanks to the members of the jury: Prof. Brahim Dkhil, Dr. Mariano Campoy, and Dr. Ingrid Cañero.

A new memory

In a radio interview (Pa Ciència la Nostra – Radio Sants) Ignasi Fina talks about the realisation of a memory device able to be connected to any PC via standard USB connection based on an antiferromagnetic material.  The realisation of this proof of concept device might be an important step on for antiferromagnetic spintronics.

Link to the interview (catalan):



The 2016 oxide electronic materials and oxide interfaces roadmap.

M Lorenz, M S Ramachandra Rao, T Venkatesan, E Fortunato, P Barquinha, R Branquinho, D Salgueiro, R Martins, E Carlos, A Liu, F K Shan, M Grundmann, H Boschker, J Mukherjee, M Priyadarshini,N DasGupta, D J Rogers, F H Teherani, E V Sandana, P Bove, K Rietwyk, A Zaban, A Veziridis,A Weidenkaff, M Muralidhar, M Murakami, S Abel, J Fompeyrine, J Zuniga-Perez, R Ramesh,N A Spaldin, S Ostanin, V Borisov, I Mertig, V Lazenka, G Srinivasan, W Prellier, M Uchida,M Kawasaki, R Pentcheva, P Gegenwart, F Miletto Granozio, J Fontcuberta and N Pryds.

J. Phys. D: Appl. Phys. 49 (2016) 433001 (53pp). DOI: 10.1088/0022-3727/49/43/433001

Giant Optical Polarization Rotation Induced by Spin-Orbit Coupling in Polarons

In this work, published in Physical Review Letters, we demonstrate that the polarization of light is changed dramatically when its energy resonates with the polaron-hopping energy of self-trapped electrons.  In the presence of spin-orbit coupling, the self-trapped hopping electron may reverse its spin producing a large gyrotropic effect, which is observed close to room temperature. The effect is observed in La23Ca13MnO3 thin films and, plausibly, should be present in other manganites.

Since straining this kind of materials can change the polaron concentration, our finding suggests a route to mechanical or electro-mechanical control of the magneto-optical effect, paving  the way to unconventional magnetoelectric effects.

This work has been highlighted with a Synopsis on the Physics website:



© MULFOX. All rights reserved.