Resistive Switching in Hf0.5Zr0.5O2 ferroelectric tunnel junctionecs
Date: Wednesday, 26 May 2021
Time: 3 pm
Abstract: HfO2-based oxides have been explored as ReRAM elements due to their resistance change caused by redox reactions. However, the discovery of ferroelectricity in doped-HfO2 opens doors to use polarization reversal as a phenomenon to control the resistance. Here, Hf0.5Zr0.5O2 epitaxial ferroelectric tunnel junctions with thickness smaller than 5 nanometers are studied. Electrical and structural analyses have allowed identifying the coexistence of genuine ferroelectric switching and ionic-like motion as mechanisms to induce resistance change in the same junction. By engineering the film’s microstructure, the ferroelectric switching was optimized and the ionic motion was suppressed. In addition, its memristive behavior were. The results presented indicate HZO tunnel junctions are feasible alternatives for application in non-volatile memories.
Supervisors:
- Josep Fontcuberta, MULFOX, ICMAB, CSIC
