January 24, 2013

Mechanisms of epitaxy and defects at the interface in ultrathin YSZ films on Si(001)

mechanisms of epitaxy

P. de Coux, R. Bachelet, C. Gatel, B. Warot-Fonrose, J. Fontcuberta, F. Sánchez

CrystEngComm (Communication) 14, 7851 (2012)



YSZ deposited under ultra-high vacuum on Si(001) grows amorphous while reduces the native SiOx. Above a thickness of 1.0–1.5, nm the whole YSZ film crystallizes from nanometric SiOx-free seeds, with subsequent lateral crystallisation of the rest of a:YSZ. With further YSZ deposition, SiOx is totally reduced with concomitant formation of a new interface between already existing crystalline YSZ film and Si substrate. Defective regions, with lattice parameter intermediate between Si and bulk YSZ, are periodically distributed along the SiOx-free interface.

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