Impact of La Concentration on Ferroelectricity of La-Doped HfO2 Epitaxial Thin Films

Epitaxial thin films of HfO₂ doped with La have been grown on SrTiO₃(001) and Si(001), and the impact of the La concentration on the stabilization of the ferroelectric phase has been determined. Films with 2–5 at. % La doping present the least amount of paraelectric monoclinic and cubic phases and exhibit the highest polarization, having a remanent polarization above 20 μC/cm². The dopant concentration results in an important effect on the coercive field, which is reduced with increasing La content. Combined high polarization, high retention, and high endurance of at least 10¹⁰ cycles is obtained in 5 at. % La-doped films.