J. Kreisel, M. C. Weber, P. A. Thomas, N. Dix, F. Sánchez, J. Fontcuberta
Adv. Funct. Mater. 26 July 2012
DOI: 10.1002/adfm.201201272
The integration of functional oxides on silicon requires the use of complex heterostructures whose properties strongly depend on the strain state.
We show that wavelength-dependent Raman scattering is well adapted to determine the strain state of individual layers in BaTiO3/LaNiO3/CeO2/YSZ structure on Silicon.
