January 21, 2021

2021

Impact of La Concentration on Ferroelectricity of La-Doped HfO2 Epitaxial Thin Films
T. Song, H. Tan, R. Bachelet, G. Saint-Girons, I. Fina,* F. Sánchez*
ACS Appl. Electron. Mater. 2021, 3, 11, 4809–4816;  DOI: doi.org/10.1021/acsaelm.1c00672

Large enhancement of ferroelectric polarization in Hf0.5Zr0.5O2 films by low plasma energy pulsed laser deposition
T. Song, R. Solanas, M. Qian, I. Fina,* F. Sánchez*
Journal of Materials Chemistry C, 2021;  DOI: doi.org/10.1039/D1TC05387F

Efficient spin pumping into metallic SrVO3 epitaxial films
Ferran Macià, Mathieu Mirjolet and Josep Fontcuberta
J. Magnetism and Magnetic Materials 546, 168871, 15 March 2022; DOI: doi.org/10.1016/j.jmmm.2021.1688716

Bulk photovoltaic effect in hexagonal LuMnO3 single crystals
Yunwei Sheng, Ignasi Fina,* Marin Gospodinov, Aaron M. Schankler Andrew M. Rappe, and Josep Fontcuberta,*
Physical ReviewB 104, 184116 (2021);   DOI: doi.org10.1103/PhysRevB.104.184116

Positive Effect of Parasitic Monoclinic Phase of Hf0.5Zr0.5O2 on Ferroelectric Endurance
Tingfeng Song, Saúl Estandía, Huan Tan, Nico Dix, Jaume Gàzquez, Ignasi Fina,* Florencio Sánchez*
Adv. Electron. Mater. 2021, 2100420;  DOI: doi.org/10.1002/aelm.202100420

High-Temperature Synthesis and Dielectric Properties of LaTaON2
Augustin Castets, Ignasi Fina, Jhonatan R. Guarín, Judith Oró-Solé, Carlos Frontera, Clemens Ritter, Josep Fontcuberta*, and Amparo Fuertes*
Inorg. Chem. 2021, 60, 16484−16491;  DOI: doi.org/10.1021/acs.inorgchem.1c02325

Switchable photovoltaic response in hexagonal LuMnO3 single crystals
Yunwei Sheng, Ignasi Fina, Marin Gospodinov, and Josep Fontcuberta
Appl. Phys. Lett. 118, 232902 (2021);  DOI: doi.org/10.1063/5.0053379

Orbital occupancy and hybridization in strained SrVO3 epitaxial films
Mathieu Mirjolet , Hari Babu Vasili, Adrian Valadkhani, José Santiso , Vladislav Borisov, Pierluigi Gargiani, Manuel Valvidares, Roser Valentí , and Josep Fontcuberta
Phys Rev. Materials 5, 095002 (2021);  DOI:doi.org/10.1103/PhysRevMaterials.5.095002

Thickness effect on ferroelectric properties of La-doped HfO2 epitaxial films down to 4.5 nm
Tingfeng Song, Romain Bachelet, Guillaume Saint-Girons, Nico Dix, Ignasi Fina and Florencio Sanchez,
J. Mater. Chem. C, 2021.;      DOI:doi.org/10.1039/D1TC02512K

Electron–Phonon Coupling and Electron–Phonon Scattering in SrVO3
M. Mirjolet, F. Rivadulla, P. Marsik, V. Borisov, R. Valentí, J. Fontcuberta,
J. Adv. Sci. 2021, 2004207. ;      DOI:doi.org/10.1002/advs.202004207

Optical Plasmon Excitations in Transparent Conducting SrNbO3 and SrVO3 Thin Films
Mathieu Mirjolet, Mikko Kataja, Tommi K. Hakala, Philipp Komissinskiy, Lambert Alff, Gervasi Herranz, Josep Fontcuberta
Adv. Opt. Materials First published: 14 June 2021;      DOI:doi.org/10.1002/adom.202100520

Stabilization of the Ferroelectric Phase in Epitaxial Hf1–xZrxO2 Enabling Coexistence of Ferroelectric and Enhanced Piezoelectric Properties
Tingfeng Song, Huan Tan, Nico Dix, Rahma Moalla, Jike Lyu, Guillaume Saint-Girons, Romain Bachelet, Florencio Sánchez, and Ignasi Fina
ACS Appl. Electron. Mater. 2021, 3, 5, 2106–2113 (2021);      DOI:doi.org/10.1021/acsaelm.1c00122

Critical Effect of Bottom Electrode on Ferroelectricity of Epitaxial Hf0.5Zr0.5O2 Thin Films
Saúl Estandía, Jaume Gazquez, Maria Varela, N. Dix, Mengdi Qian, Raul Solanas, Ignasi Fina and Florencio Sanchez
J. Mater. Chem. C, 9, 3486 – 3492 (2021);      DOI:doi.org/10.1039/D0TC05853J

Epitaxial Ferroelectric HfO2 Films: Growth, Properties, and Devices
Ignasi Fina* and Florencio Sánchez*
ACS Appl. Electron. Mater. 2021, 3, 4, 1530-1549;      DOI:doi.org/10.1021/acsaelm.1c00110

Non-volatile optical switch of resistance in photoferroelectric tunnel junctions
X.Long, H. Tan, F. Sánchez, I. Fina, J. Fontcuberta
Nature Communications volume 12, Article number: 382 (2021);    DOI:10.1038/s41467-020-20660-9

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