In a radio interview (Pa Ciència la Nostra – Radio Sants) Ignasi Fina talks about the realisation of a memory device able to be connected to any PC via standard USB connection based on an antiferromagnetic material. The realisation of this proof of concept device might be an important step on for antiferromagnetic spintronics.
Link to the interview (catalan):
In this work, published in Physical Review Letters, we demonstrate that the polarization of light is changed dramatically when its energy resonates with the polaron-hopping energy of self-trapped electrons. In the presence of spin-orbit coupling, the self-trapped hopping electron may reverse its spin producing a large gyrotropic effect, which is observed close to room temperature. The effect is observed in La2∕3Ca1∕3MnO3 thin films and, plausibly, should be present in other manganites.
Since straining this kind of materials can change the polaron concentration, our finding suggests a route to mechanical or electro-mechanical control of the magneto-optical effect, paving the way to unconventional magnetoelectric effects.
This work has been highlighted with a Synopsis on the Physics website: