Thermal evolution of ferroelectric behavior in epitaxial Hf0.5Zr0.5O2

J. W. Adkins, I. Fina, F. Sanchez, S. R. Bakaul, and J. T. Abiade

Appl. Phys. Lett. 117, 142902 (2020);

DOI: 10.1063/5.0015547

 

Abstract

Herein, we report a cryogenic-temperature study on the evolution of the ferroelectric properties of epitaxial Hf0.5Zr0.5O2 thin films on silicon. Wake-up, endurance, and fatigue of these films are found to be intricately correlated, strongly hysteretic, and dependent on available thermal energy. Field-dependent measurements reveal a decrease in polarization with temperature, which has been determined not to be an intrinsic change of the material property, rather a demonstration of the increase in the coercive bias of the material. Our findings suggest that a deficiency in thermal energy suppresses the mobility of defects presumed to be oxygen vacancies during wake-up and trapped injected charge during fatigue, which is responsible for polarization evolution during cycling. This permits accelerated wake-up and fatigue effects at high temperatures where thermal energy is abundant but delays these effects at cryogenic temperatures.