Interface Magnetoelectric Coupling in Co/Pb(Zr,Ti)O3
OndřejVlašín, RomainJarrier, Rémi Arras, Lionel Calmels, BénédicteWarot-Fonrose, Cécile Marcelot, MatthieuJamet, Philippe Ohresser, Fabrice Scheurer, Riccardo Hertel, GervasiHerranz, and SaliaCherifi-Hertel
The magnetoelectric coupling in Co/PZT bilayers have been analyzed by multiple methods, including polarized optical imaging. The measurements allow us to identify different coupling mechanisms and extract a signal that we can ascribe to interface magnetoelectric coupling. This interface coupling is remarkably stable over a wide frequency range (1–50 kHz), and the application of a bias magnetic field is not necessary for the coupling to occur. These results show the potential of exploiting interface coupling with the prospect of optimizing the performance of magnetoelectric memory devices in terms of stability, as well as fast and dissipationless operation.