Electric transport through nanometric CoFe2O4 thin films investigated by conducting atomic force microscopy

M. Foerster, D.F. Gutierrez, J. M. Rebled, E. Arbelo, F. Rigato, M. Jourdan, F. Peiró, J. Fontcuberta

J. Appl. Phys. 111, 013904 (2012)

http://dx.doi.org/10.1063/1.3672839

A systematic study of electric transport through thin (2–8 nm) CoFe2O4 films deposited on epitaxial

SrRuO3 bottom electrodes was performed by conducting atomic force microscopy (CAFM).

Experimental procedures to investigate transport through thin insulating films by CAFM are critically

revised, and the potential of CoFe2O4 films for the use as spin-filtering barriers is assessed. It is concluded that, at room-temperature, a non-tunnel channel significantly contributes to the electric transport, thuslimiting the spin-filtering efficiency.